Skip to main content Accessibility help
×
Home

Modification of the electronic properties of a-Si1-xCx:H by Fe+ ion implantation

  • T. Tsvetkova (a1), S. Balabanov (a1), B. Amov (a2), Ch. Angelov (a2), J. Zuk (a3), D. Maczka (a3), G.J. Adriaenssens (a4) and K. Iakoubovskii (a4)...

Abstract

The electrical and optical properties of hydrogenated amorphous silicon-carbide alloy films (a-Si1-xCx:H), modified by Fe+ ion implantation (D = 1×1016 - 1×1017 cm-2), have been investigated. Optical transmission spectra have been measured in the visible range (400-900 nm) and considerable absorption edge shift to the longer wavelength region has been registered, together with well-defined decrease of transmittance in the whole measured range. These effects are increased with the dose and are similar for samples with different carbon content (x1=0.08 and x2=0.15). Room temperature (RT) surface electrical conductivity is also increased by Fe+ implantation and the effect is most pronounced for the highest doses (D ~ 1017cm-2). The temperature dependence of the conductivity was measured in the temperature range from RT to 250 oC. The activation energy is considerably reduced and the effect is again strongest for the highest doses. From the above results we conclude that high doses Fe+ implantation in a-Si1-xCx:H affects both the localised states deep in the gap and the shallow states in the band tails.

Copyright

References

Hide All
1.Pensl, G. and Helbig, R., Adv. Solid State Phys. 30, 133 (1990).
2.Choyke, W. and Pensl, G., Phys. Blaetter 47, 212 (1991).
3.Bullot, J. and Schmidt, M., Phys.stat.sol. (b) 143, 345 (1987).
4.Ziegler, J.F., Ion Implantation, Academic Press, New York, 1988.
5.Wilson, I.H., in Ion Beam Modification of Insulators, eds. Mazzoldi, P. and Arnold, G., Elsevier, The Netherlands, 1987, p.245.
6.White, A.E., Short, K.T., Dynes, R.C., Carno, J.P. and Gibson, J.M., Appl. Phys. Lett. 50, 95 (1987).
7.Hutchinson, S., Finney, M., Reeson, K., Harry, M., Gwilliam, R. and Sealy, B., in Ion Implantation Technology - 94, eds. Coffa, S., et al. Elsevier, 1995, p.934.
8.Sealy, B., Gwilliam, R., Shannon, J., Jeynes, C., Angelov, C. and Tsvetkova, T., Vacuum 51, 281 (1998).
9.Tzenov, N., Tzolov, M., Dimova-Malinovska, D., Sealy, B. and Tsvetkova, T., in Future Directions in Thin Film Science and Technology, eds. Marshall, J.M., Kirov, N., Vavrek, A. and Maude, J., World Scientific, Singapore, 1997, p.321.
10.Emerson, N.G., Gwilliam, R.M., Shannon, J.M., Jeynes, C., Sealy, B.J., Tsvetkova, T., Tzenov, N. and Dimova-Malinovska, D., Nucl. Instrum. & Meth. B 160, 505 (2000).
11.Adriaenssens, G.J. and Öktü, Ö., in Electronic and Optoelectronic Materials, eds. Marshall, J.M., Kirov, N. and Vavrek, A., World Scientific, Singapore, 1993, p.169.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed