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Modification of μm Thick Surface Layers Using keV Ion Energies*

  • L. E. Rehn (a1), N. Q. Lam (a1) and H. Wiedersich (a1)

Abstract

Root-mean-square diffusion distances for both vacancy and interstitial defects in metals can be very large at elevated temperatures, e.g. several μm's in one second at 500°C. Consequently, defects that escape the implanted region at elevated temperature can produce compositional and microstructural changes to depths which are much larger than the ion range. Because of the high defect mobilities, and of the fact that diffusion processes must compete with the rate of surface recession, the effects of defect production (ballistic mixing), radiation-enhanced diffusion and radiation- induced segregation become spatially separated during ion bombardment at elevated temperature. Results of such experimental studies in a Cu-Ni alloy are presented, discussed and compared with predictions of a phenomenological model. Contributions to the subsurface compositional changes from radiation-enhanced diffusion and radiation- induced segregation are clearly identified.

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Work supported by the U.S. Department of Energy.

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Modification of μm Thick Surface Layers Using keV Ion Energies*

  • L. E. Rehn (a1), N. Q. Lam (a1) and H. Wiedersich (a1)

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