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Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

  • Alok Nandini (a1), U. Roy (a1), A. Mallikarjunan (a1), A. Kumar (a1), J. Fortin (a1), G.S. Shekhawat (a2), Robert Geer (a2), Katherine Dovidenko (a2), Eric Lifshin (a2), H. Bakhru (a2) and T.M. Lu (a1)...

Abstract

Thin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

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Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

  • Alok Nandini (a1), U. Roy (a1), A. Mallikarjunan (a1), A. Kumar (a1), J. Fortin (a1), G.S. Shekhawat (a2), Robert Geer (a2), Katherine Dovidenko (a2), Eric Lifshin (a2), H. Bakhru (a2) and T.M. Lu (a1)...

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