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Modelling of Temperature Distribution of Semiconductors During Rapid Thermal Processing

Published online by Cambridge University Press:  22 February 2011

Andreas Tillmann
Andreas Tillmann*
Affiliation:
A.S.T. elektronik GmbH, Science Park, Helmholtzstrasse 20, D-89081 Ulm, Germany
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Abstract

The modelling of temperature distribution on semiconductor wafers in common RTP-equipment is described. The incident intensity distribution on the wafer is calculated using raytracing. Based on this distribution the temperature distribution on the wafer is determined solving the two-dimensional heat conduction equation. If the dependence of a considered material property on the process temperature is known, the calculated temperature distribution can be convened to a distribution of this parameter.

The distinctive feature of the described algorithms is the two-dimensional treatment of the distributions using a grid of ring segments, each with equal area. This grid is identical to the usual circular test patterns of multipoint measurement equipment. This is convenient since the evaluation of temperature uniformity in RTP equipment is done mostly by mapping an appropriate temperature dependent material property. All calculated distributions can be presented by contour plots as well as 3-D plots. This results in a very suitable method to compare simulated and experimental wafer maps.

The agreement between simulated and experimental temperature distributions is shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 377
Copyright
Copyright © Materials Research Society 1994

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References

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