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Modelling Of Rapid Thermal And Furnace Oxide Growth

  • P. J. Rosser (a1), P. B. Moynagh (a1) and C. N. Duckworth (a1)

Abstract

The reproducible growth of thin high quality silicon dioxide films is of fundamental importance to advanced VLSI processes. Oxides in the range 1–2 nm are required for electron tunnelling barriers in advanced BIPOLAR processes, and in the range 10–50 nm for the gate oxide in MOS processes.

The excellent degree of control over time, temperature and ambient atmosphere that can be achieved in halogen lamp rapid annealing systems suggested the possibility of growing thin films of silicon dioxide on silicon very reproducibly.

This paper compares the growth of oxides in an AG Associates' Heatpulse system with those grown in a conventional dry oxidation system. Oxides in the range 1–1000 nm have been grown in these systems and the thicknesses are compared with those predicted by the SUPREM 3 and Deal Grove models. Modifications to these models are suggested which allow for accurate prediction of thermal oxide growth above 2 nm.

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References

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1. Massoud, H.Z., Plummer, J.D., J.Electrochem Soc, Vol.132, p. 1745 (1985)
2. Deal, B.E. and Grove, A.S., J. Appl. Phys., Vol. 36, p. 3770 (1965)
3. Technology Modelling Associates, Inc., “Suprem 3 One-dimensional Process Analysis Program; Version 3–1”, February 1984
4. Massoud, H.Z., Technical Report No. G502–1, Standard Electronics Labs., June 1983.

Modelling Of Rapid Thermal And Furnace Oxide Growth

  • P. J. Rosser (a1), P. B. Moynagh (a1) and C. N. Duckworth (a1)

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