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Modeling Silicon Implantation Damage and Transient Enhanced Diffusion Effects for Silicon Technology Development

  • Martin D. Giles (a1), Shaofeng Yu (a2), Harold W. Kennel (a2) and Paul A. Packan (a2)

Abstract

Despite more than 20 years of effort, detailed understanding of defect-coupled dopant diffusion in silicon still falls short of what is practically required to support state-of-the-art silicon technology development. The challenge for modeling in industry is to combine the best of our physical understanding with measurements of dopant profiles for technology-relevant conditions to provide models which are as predictive and efficient as possible. This paper presents experimental results which provide insight into damage generation and annealing processes and discusses practical modeling approaches to support technology development despite our incomplete understanding of the physical processes involved.

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Modeling Silicon Implantation Damage and Transient Enhanced Diffusion Effects for Silicon Technology Development

  • Martin D. Giles (a1), Shaofeng Yu (a2), Harold W. Kennel (a2) and Paul A. Packan (a2)

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