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The Modeling Routes for the Chemical Vapor Deposition Process

  • M. Pons (a1), C. Bernard (a2), H. Rouch (a3) and R. Madar (a3)

Abstract

The purpose of this article is to present the modeling routes for the chemical vapor deposition process with a special emphasis to mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two selected approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si1-x Gex solid solution at 1300 K (system Si-Ge-Cl-H-Ar), the thermodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.

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The Modeling Routes for the Chemical Vapor Deposition Process

  • M. Pons (a1), C. Bernard (a2), H. Rouch (a3) and R. Madar (a3)

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