Skip to main content Accessibility help
×
Home

Modeling of MBE Growth with Interacting Fluxes

  • David H. Tomich (a1), K. G. Eyink (a1), T. W. Haas (a1), M. A. Capano (a1), R. Kaspi (a2) and W. T. Cooley (a2)...

Abstract

Ternary and quaternary III-V alloys are important for many optical device applications, and a precise control of the composition is required. Molecular beam epitaxy (MBE) is generally considered a non-equilibrium or kinetically controlled process but most of these models are too computationally intensive for real time control. We report on using a precursor state growth model 1,2 for the growth of GaAsSb to control the growth conditions and hence the film composition. The activation energies and the parameters appearing in the relationship are determined by fitting the calculated compositions to experimental ones as determined by x-ray diffraction. The effect of substrate temperature, growth rate and flux intensities on composition is discussed.

Copyright

References

Hide All
[1] Nomura, T., et. al. J. Crystal Growth 111 61 (1991).
[2] Zhu, Z., et. al. J. Crystal Growth 96 513 (1989).
[3] Osbourn, G.C., J. Vac. Sci. Technol. B2 (2), 176 (1984).
[4] Yano, M., et. al. J. Vac. Sci. Technol. B7 (2), 199 (1989).
[5] Yen, M. Y., et. al. Appl. Phys. Lett. 50, 927 (1987).
[6] Seki, H. and Koukitu, A., J. Crystal Growth 78, 342 (1986).
[7] Yang, C-A, et. al. Appl. Phys. Lett. 13, 759 (1977).
[8] Nelder, J. A. and Mead, R., Computer Journal 7, 308 (1965).
[9] Wunder, R., et. al. J. Vac. Sci. Technol. B3 (4), 964 (1985).

Modeling of MBE Growth with Interacting Fluxes

  • David H. Tomich (a1), K. G. Eyink (a1), T. W. Haas (a1), M. A. Capano (a1), R. Kaspi (a2) and W. T. Cooley (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed