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Modeling of InGaAs optical constants and its application to spectroscopic ellipsometry study of strained InGaAs/AlGaAs based structures

Published online by Cambridge University Press:  22 February 2011

V. A. Yakovlev
V. A. Yakovlev*
Affiliation:
Instruments SA, Inc., 3880 Park Ave., Edison, NJ 08820
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Extract

There is a broad spectrum of electronic devices, e.g., high electron mobility, heterojunction bipolar (HBTs) and modulation doped field effect (MODFETs) transistors, and optoelectronic devices, e.g., low-threshold quantum-well (QW) lasers, which employ strained InyGa1-yAs layers to improve device performance due to the enhanced flexibility in the electronic structure. These devices have very promising applications. For example, the ultra-low threshold lasers are going to play a major role in computer interconnect circuits due to their low-power consumption. Strainlayer InGaAs/GaAs QW lasers are of considerable interest as a possible candidate for pumping the upper states of Er-doped silica fiber amplifiers of optical networks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 373
Copyright
Copyright © Materials Research Society 1994

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References

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