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Modeling of Dislocations in an Epitaxial Island Structure

  • X. H. Liu (a1), F. M. Ross (a1) and K. W. Schwarz (a1)


We present calculations of dislocations in CoSi2 islands grown by reactive epitaxy on a Si(111) substrate. The stress fields due to the lattice mismatch are calculated with standard FEM techniques, and are converted into a structured, multi-level and multi-grid stress table that is imported into the PARANOID code to study the dislocation dynamics. Single and multiple dislocations in the island have been simulated, and the predicted patterns are strikingly similar to those observed experimentally. By looking at the growth behavior of very small loops we also find that dislocation-loop nucleation becomes easier as the islands become larger, and that thick islands are dislocated at smaller sizes than thin ones. These results are also in good agreement with experimental observations. We conclude that current modeling techniques are sufficient to treat this type of problem at a useful level of accuracy.



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[1] Liu, X. H., Ross, F. M., and Schwarz, K. W., Phys. Rev. Lett. 85, 4088 (2000).
[2] Hirth, J. P. and Lothe, J., Theory of Dislocations, (Krieger, Malabar, FL, 1992).
[3] DeVincre, B. and Kubin, L. P., Model. Simu. Mater. Sci. Eng. 2, 559 (1994).
[4] Zbib, H. M., Rhee, M., and Hirth, J. P., Int. J. Mech. Sci. 40, 113 (1998).
[5] Schwarz, K. W., J. Appl. Phys. 85, 108 (1999).
[6] Ghoniem, N. M. and Sun, L. Z., Phys. Rev. B60, 128 (1999).
[7] ABAQUS User's Manual Version 5.7 (Hibbitt, Karlsson, and Sorensen, Inc., Pawtucket, RI, 1997).
[8] Eshelby, J. D. and Stroh, A. N., Phil. Mag. 42, 1401 (1951).
[9] Dundurs, J., Elastic Interaction of Dislocations with Inhomogeneities, in Mathematical Theory of Dislocations, ed. Mura, T., (ASME, New York, NY, 1969) pp. 70115.
[10] Eshelby, J. D., Boundary Problems, Chap. 3 in Dislocations in Solids, Vol. 1, ed. Nabarro, F.R.N., (North-Holland Publishing Company, 1979) pp. 169221.
[11] Boussinesq, J., Application des potentiels à l'équilibre et du movement des solides élastiques, (Paris: Gauthier-Villars, 1885) p.45.
[12] Cerruti, V., Roma, Acc. Lincei, mem. fis. mat. (1882).
[13] Liu, X. H. and Schwarz, K. W., in preparation (2001).
[14] Tung, R. T., Poate, J. M., Bean, J. C., Gibson, J. M., and Jacobson, D. C., Thin Solid Films 93, 77 (1982).
[15] Kanel, H. von, Mat. Sci. Rep. 8, 193 (1992).
[16] Maex, K., Mat. Sci. and Eng. R11, 53 (1993).
[17] Gibson, J. M., Bean, J. C., Poate, J. M., and Tung, R. T., Thin Solid Films 93, 99 (1982).
[18] Chambers, S. A., Anderson, S. B., Chen, H. W., and Weaver, J. H., Phys Rev. B34, 913 (1986)
[19] Gibson, J. M., Batstone, J. L., and Tung, R. T., Appl. Phys. Lett. 51, 45 (1987).
[20] Bulle-Lieuwma, C. W. T., Vandenhoudt, D. E. W., Henz, J., Onda, N., and Kanel, H. von, J. Appl. Phys. 73, 3220 (1993).
[21] Bennett, P. A., Parikh, S. A., and Cahill, D. G., J. Vac. Sci. Technol. A11, 1680 (1993).
[22] Hammar, M., LeGoues, F., Tersoff, J., Reuter, M. C., and Tromp, R. M., Surf. Sci. 349, 129 (1995).
[23] Ross, F. M., LeGoues, F. K., Tersoff, J., Tromp, R. M., and Reuter, M. C., Microscopy Res. Tech. 42, 281 (1998).
[24] Ross, F. M., Bennett, P. A., Tromp, R. M., Tersoff, J., and Reuter, M. C., Micron 30, 21 (1999)
[25] Ross, F. M., Tersoff, J., Tromp, R. M., Reuter, M. C., and Bennett, P. A., J. Electron Microscopy 48, 1059 (1999).
[26] Maex, K. and Rossum, M. van, editors, Properties of Metal Silicides, EMIS Data Reviews, (Inspec, London, 1995).


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