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Modeling of {311} Defects

Published online by Cambridge University Press:  10 February 2011

G. Hobler  and
C.S. Rafferty
G. Hobler
Affiliation:
University of Technology Vienna, A-1040-Vienna, AUSTRIA, gerhard.hobler@tuwien.ac.at
C.S. Rafferty
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

An improved model of {311} defect evolution is developed based on the rate equations approach. A new expression for the reaction rate constant is presented that is based on the assumption that interstitials may react with the {311} defects along their whole surface. The energetics of {311} defects is treated by calculating the strain energy within the framework of the theory of dislocations in isotropic continua. Using the core energy of the atoms in the defects as the only fit parameter, we explain a wide range of experimental data. Furthermore, we apply the model to investigate closure assumptions used in moments models and propose a new two-moments model that uses the rate equations solver as a pre-processor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 123
Copyright
Copyright © Materials Research Society 1999

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References

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