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Modeling for the Diamond-Like Carbon Film Synthesis by Plasma Based Ion Implantation

Published online by Cambridge University Press:  17 March 2011

Yoshiko Miyagawa ,
Flyura Djurabekova  and
Soji Miyagawa
Yoshiko Miyagawa
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1, Hirate-cho, Kita-ku, Nagoya, 462-8510, Japan
Flyura Djurabekova
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1, Hirate-cho, Kita-ku, Nagoya, 462-8510, Japan
Soji Miyagawa
Affiliation:
National Institute of Advanced Industrial Science and Technology, 1-1, Hirate-cho, Kita-ku, Nagoya, 462-8510, Japan
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Abstract

Dynamic Monte Carlo simulations with the binary collision approximation have been applied to the synthesis of hydrogenated amorphous carbon (a-C:H) films by plasma based ion implantation (PBII). We take as representative carbon carriers energetic CH3+ ions and CH3 radicals. The direct chemical incorporation of the radicals, like CH3 reacting with a diamond surface, is too low for the deposition of DLC films, so that the other reaction mechanisms should be responsible. We assumed (a) complete dissociation of CH3+ ions into one C atom and three H atoms with identical velocities upon bombarding the surface, (b) a unity and only one mono-layer sticking of CH3 radicals on the surface, (c) incorporation (stitching) of H and C atoms under the surface induced by binary collisions with energetic CH3+ ions, (d) release of H atoms by the dissociation of CH3 radicals on the surface, and (e) release of a part of displaced H atom after the subsequent collision cascade. We also assumed only the stitched carbon atoms form sp3 states and all other carbon atoms form sp2 states. The effect of the target voltage on the ion dose was also included. The effects of ion/neutral arrival ratio and ion energy on the growth rate, the mixing layer thickness, the hydrogen content, and the sp3/sp2 ratio in the deposited film are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O11.12
Copyright
Copyright © Materials Research Society 2001

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