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Modeling Atomistic Ion-Implantation and Diffusion for Simulating Intrinsic Fluctuation in MOSFETs arising from Line-Edge Roughness

Published online by Cambridge University Press:  17 March 2011

Masami Hane ,
Takeo Ikezawa  and
Tatsuya Ezaki
Masami Hane
Affiliation:
System Devices Research Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara 229-1198, Japan, E-mail: hane@az.jp.nec.com
Takeo Ikezawa
Affiliation:
NEC Informatec Systems, Ltd
Tatsuya Ezaki
Affiliation:
System Devices Research Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara 229-1198, Japan, E-mail: hane@az.jp.nec.com
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Abstract

We have developed new simulation tools to enable more precise design of sub-100nm MOSFETs. Intrinsic fluctuations in the characteristics of these devices occur as part of their statistical nature. Our three-dimensional atomistic approach to both process and device simulations enabled us to examine the coupling effects of the most significant sources of fluctuation, i.e. line-edge-roughness and random discrete dopants, considering practical fabrication processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C6.1
Copyright
Copyright © Materials Research Society 2004

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References

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