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Modeling and 2D Numerical Simulation of Transient Phenomena in Floating Body Soi Mosfets
Published online by Cambridge University Press: 10 February 2011
Abstract
This paper presents a numerical-simulation-based investigation of drain current transients in floating body partially and fully depleted n-channel SOI MOSFETs. For both Zerbst-type and overshoot transients, analytical models are developed and validated. An original contribution concerns the detailed study of drain and source junction influences on the transient regime.
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- Copyright © Materials Research Society 1998