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MOCVD of Ferroelectric Thin Films

Published online by Cambridge University Press:  01 February 2011

C. E. Rice ,
S. Sun ,
J. D. Cuchiaro ,
L. G. Provost  and
G. S. Tompa
C. E. Rice
Affiliation:
Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ 08854
S. Sun
Affiliation:
Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ 08854
J. D. Cuchiaro
Affiliation:
Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ 08854
L. G. Provost
Affiliation:
Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ 08854
G. S. Tompa
Affiliation:
Structured Materials Industries, Inc., 201 Circle Drive North, Unit 102/103, Piscataway, NJ 08854
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Abstract

We have examined the growth of a number of important ferroelectric oxides by MOCVD using a rotating disk reactor. Highly uniform and reproducible films over 6” wafers have been routinely achieved. Materials include Lead Zirconate Titanate (PZT, PbZrxTi1-xO3), Lead Lanthanum Zirconate Titanate (PLZT), Strontium Bismuth Tantalate (SBT), CeMnO3 (CMO), and others. Emphasis has been on achieving highly crystalline and oriented films at the lowest deposition temperatures possible, for compatibility with other integrated device materials and processing; and the achievement of optimum ferroelectric and pyroelectric performance. The effects of varying growth parameters, barrier and/or template layers, and post-growth annealing have been studied. The growth process, physical characterization, and ferroelectric film properties will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.47
Copyright
Copyright © Materials Research Society 2004

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References

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