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Mocvd of Copper from New and Liquid Precursors (hfac)CuL, Where L = 1-Pentene, Atms, and Vtmos

  • H. K. Shin (a1), H. J. Shin (a1), S. J. Lim (a1), D. J. Yoo (a1), N. Y. Oh (a2), H. J. Yoo (a3), J. T. Baek (a3), C. H. Jun (a3) and Y. T. Kim (a3)...

Abstract

Liquid and volatile (hfac)CuL compounds where hfac = 1,1,1,5,5,5-hexafluoro- 2,4-pentanedionate and L = 1-pentene (1), acetyltrimethylsilane (2), and vinyltri- methoxysilane (3) were newly developed for reproducible copper deposition. During CVD processes, no premature decomposition of the precursor was observed in the source reservoir that contained the mixture of (hfac)CuL and excess free ligand L. Pure Cu films were deposited in the deposition temperature range 180°C ˜ 220°C

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Mocvd of Copper from New and Liquid Precursors (hfac)CuL, Where L = 1-Pentene, Atms, and Vtmos

  • H. K. Shin (a1), H. J. Shin (a1), S. J. Lim (a1), D. J. Yoo (a1), N. Y. Oh (a2), H. J. Yoo (a3), J. T. Baek (a3), C. H. Jun (a3) and Y. T. Kim (a3)...

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