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MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

Published online by Cambridge University Press:  01 February 2011

Haruki Yokoyama ,
Hiroki Sugiyama ,
Yasuhiro Oda ,
Michio Sato ,
Noriyuki Watanabe  and
Takashi Kobayashi
Haruki Yokoyama
Affiliation:
NTT Photonics Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–0124 Japan
Hiroki Sugiyama
Affiliation:
NTT Photonics Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–0124 Japan
Yasuhiro Oda
Affiliation:
NTT Photonics Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–0124 Japan
Michio Sato
Affiliation:
NTT Photonics Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–0124 Japan
Noriyuki Watanabe
Affiliation:
NTT Advanced Technology Corporation, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–0124 Japan
Takashi Kobayashi
Affiliation:
NTT Photonics Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243–0124 Japan
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Abstract

This paper studies the decomposition characteristic of group-III sources during InAlAsSb growth on InP substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMI), trimethylaluminum (TMA), trimethylantimony (TMSb) and arsine (AsH3). A composition analysis of InAlAsSb layers shows that the group-III compositions in the InAlAsSb layer change remarkably when the flow rate of the group-V source is varied. To clarify the reason for this phenomenon, the growth rates of InAsSb and AlAsSb component are examined. Their changes indicate that TMSb suppresses the decomposition of TMA while AsH3 enhances it. Moreover, the HEMT structure with InP/InAlAsSb Schottky barrier layer, whose InP layer acts as a recess-etch-stop layer, is fabricated for the first time. The I-V characteristics of a fabricated Schottky barrier diode indicate that the reverse leakage current of InP/InAlAsSb is about one order of magnitude smaller than that of commonly used InP/InAlAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z4.3
Copyright
Copyright © Materials Research Society 2004

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References

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