Skip to main content Accessibility help
×
Home

Mocvd Growth of GaAs on Si

  • Masahiro Akiyama (a1), Takash Ueda (a1) and Sachiko Onozawa (a1)

Abstract

The initial stage of the growth of GaAs on Si by, MOCVD, the reduction of the residual dislocations by annealing at high temperatures and the dependence of the growth temperature on the stress in the GaAs layer were studied. The density and the size of deposited GaAs islands at the initial stage of the growth in the two-step growth sequence strongly affected the domain property of the subsequently grown layer. For reducing the residual dislocations by annealing at high temperatures, to repeat the growth and the annealing was more effective method compared with the other annealing methods we tried. The stress in the GaAs layers showed a constant value independently of the growth temperature and the value was related to the thermal expansion between room temperature and about 350°C.

Copyright

References

Hide All
1) See, for example, Mat. Res. Soc. Symp. Proc. 67 (1986)
2) See, for example, Mat. Res. Soc. Symp. Proc. 91 (1987)
3) Bieglsen, D.K., Ponce, F.A., Smith, A.J. and , Tramontana; Mat. Res. Soc. Symp. Proc. 67, 45 (1986)
4) Harris, J.S. Jr., Koch, S.M. and Rosner, S.J.; Mat. Res. Soc. Symp. 91. 3 (1987)
5) Takasugi, H., Ueda, T., Kawabe, M. and Bando, Y.; Ext. Abst. 18th Conf. Solid State Dev. and Mat. 109 (1986)
6) Takasugi, H., Kawabe, M., Bando, Y.; Jpn. J. Appl. Phys. 26, L584 (1987)
7) Akiyama, M., Kawarada, Y. and Kaminishi, K.; Jpn. J. Appl. Phys. 23, L843 (1984)
8) Ishida, K., Akiyama, M. and Nishi, S.; Jpn. J. Appl. Phys. 25, L288 (1986)
9) Chand, N., People, R., Baiocchi, F.A., Wecht, K.W. and Cho, A.Y.; Appl. Phys. Lett. 49, 815 (1986)
10) Lee, J.W., Shichijo, H., Tsai, H.L. and Matyi, R.J.; Appl. Phys. Lett. 50, 31 (1987)
11) Choi, C., Otsuka, N., Munns, G., Houdre, R., Morkoq, H., Zhang, S.I., Levi, D. and Klein, M.V.; Appl. Phys. Lett. 50, 992 (1987)
12) Okamoto, H., Watanabe, Y., Kadota, Y. and Ohmachi, Y.; Jpn. J. Appl. Phys. 26, L1950 (1987)
13) Soga, T. and Hattori, S.; J. Appl. Phys. 57, 4578 (1985)
14) Fischer, R., Newman, D., Zabel, H. and Morkoq, H.; Appl. Phys. Lett. 48, 1223 (1986)
15) Nishimura, T., Mizuguchi, K., Hayafuji, N. and Murotani, T.; Jpn. J. Appl. Phys. 26, L1141 (1987)
16) El-Masry, N., Hamaguchi, N., Tarn, J.C.L., Karam, N., llumphreys, T.P., Moor, D., Bedair, S.M.; Mat. Res. Soc. Symp. Proc. 91, 99 (1987)
17) Shimizu, M., Sugawara, K. and Sakurai, T.; J. Jpn. Assoc. Cryst. Growth 13 253 (1986) [in Japanese]
18) Ishida, K., Akiyama, M. and Nishi, S.; Jpn. J. Appl. Phys. 26, L163 (1987)
19) Drum, C.M. and Rand, M.J.; J. Appl. Phys. 39, 4458 (1968)
20) Brantley, W.A.; J. Appl. Phys. 44, 534 (1973)
21) Yokoyama, S., Yui, D., Shiraishi, T. and Kawabe, K.; Ext. Abst. 19th Conf. Solid State Dev. and Mat. 147 (1987)

Mocvd Growth of GaAs on Si

  • Masahiro Akiyama (a1), Takash Ueda (a1) and Sachiko Onozawa (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed