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Mocvd Growth of GaAs on Si

Published online by Cambridge University Press:  28 February 2011

Masahiro Akiyama ,
Takash Ueda  and
Sachiko Onozawa
Masahiro Akiyama
Affiliation:
Semiconductor Technology Laboratory, Oki Electric Industry Co.,Ltd. 550–5 Higashiasakawa, Hachioji, Tokyo 193, Japan
Takash Ueda
Affiliation:
Semiconductor Technology Laboratory, Oki Electric Industry Co.,Ltd. 550–5 Higashiasakawa, Hachioji, Tokyo 193, Japan
Sachiko Onozawa
Affiliation:
Semiconductor Technology Laboratory, Oki Electric Industry Co.,Ltd. 550–5 Higashiasakawa, Hachioji, Tokyo 193, Japan
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Abstract

The initial stage of the growth of GaAs on Si by, MOCVD, the reduction of the residual dislocations by annealing at high temperatures and the dependence of the growth temperature on the stress in the GaAs layer were studied. The density and the size of deposited GaAs islands at the initial stage of the growth in the two-step growth sequence strongly affected the domain property of the subsequently grown layer. For reducing the residual dislocations by annealing at high temperatures, to repeat the growth and the annealing was more effective method compared with the other annealing methods we tried. The stress in the GaAs layers showed a constant value independently of the growth temperature and the value was related to the thermal expansion between room temperature and about 350°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 79
Copyright
Copyright © Materials Research Society 1988

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