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MOCVD Growth of GaAs on Si with Low Temperature Preheating Process

  • N. Takagi (a1), T. Eshita (a1), S. Miyagaki (a1), M. Kimura (a1) and K. Takasaki (a1)...

Abstract

A low temperature preheating process is developed for metalorganic chemical vapor deposition (MOCVD) growth of GaAs on wet chemical pretreated Si substrates. NH4 OH/H2 O2 is found to be most effective in decreasing the preheating temperature among the chemicals we tried: NH4 OH/H2 O2, H2SO4 /H2O2, or hot HNO3. By using NH4OH/H2 O2, the preheating temperature is reduced from 1000°C to 875°C. X-ray diffraction measurements and surface observations with an atomic force microscope (AFM) show that the GaAs film quality obtained with the 875 °C preheating process is better than that obtained with 1000°C preheating.

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