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MOCVD Growth of Copper and Copper Oxide Films from Bis-β-Diketonate Complexes of Copper. The Role of Carrier Gas on Deposit Composition.

Published online by Cambridge University Press:  15 February 2011

William S. Rees Jr.  and
Celia R. Caballero
William S. Rees Jr.
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006, U.S.A.
Celia R. Caballero
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006, U.S.A.
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Abstract

An examination of thermal chemical vapor deposit elemental composition by EDAX has been completed for material films grown from Cu(acac)2 and Cu(tmhd)2 (acac = pentane-2,4-dionate; tmhd = 2,2,6,6-tetramethylheptane-3,5-dionate), using both hydrous and anhydrous carrier gas steams each of reducing (H2), inert (H2), and oxidizing (O2) composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 297
Copyright
Copyright © Materials Research Society 1992

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