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Misfit Dislocation Nucleation Sites and Metastability Enhancement of Selective Si1−xGex/Si Grown by Rapid Thermal Chemical Vapor Deposition
Published online by Cambridge University Press: 25 February 2011
Abstract
A quantitative model of the effect of the selective growth on dislocation density has been developed and compared to experiments. It is concluded that the dominant dislocation nucleation source in the selective areas occurs at the specific heterogeneous sites at edges of the selective areas. This edge nucleation can be controlled by adjusting the orientation of the sidewalls.
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- Copyright © Materials Research Society 1992
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