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Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Jing-Hong Li ,
Olga M. Kryliouk ,
Paul H. Holloway ,
Timothy J. Anderson  and
Kevin S. Jones
Jing-Hong Li
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Olga M. Kryliouk
Affiliation:
Dept. of Chemical Engineering, University of Florida, Gainesville, FL 32611
Paul H. Holloway
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Timothy J. Anderson
Affiliation:
Dept. of Chemical Engineering, University of Florida, Gainesville, FL 32611
Kevin S. Jones
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

Microstructures of GaN films grown on the LiGaO2 by metalorganic chemical vapor deposition (MOCVD) have been characterized by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). TEM and HRTEM results show that high quality single-crystal wurtzite GaN films have been deposited on the LiGaO2 and that the GaN film and the LiGaO2 have the following orientation relationship: (2110)(0002)GaN ̂ (002)LiGaO2 ^ 5–8°. A higher density of threading dislocations and stacking faults have been observed near the GáN/LiGaO2 interface, even though the lattice mismatch of GaN to LiGaO2 is only ∼1%. Threading dislocations with burgers vector b=<0001> and b=a/3<1120> are predominant in the GaN films. Also the GaN films contain some columnar inversion domain boundaries (IDBs). Both TEM and HRTEM results reveal that there is an unexpected amorphous or nano-crystalline inter-layer between the GaN and the LiGaO2 with a thickness of 50–100 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 167
Copyright
Copyright © Materials Research Society 1997

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References

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