Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-01T23:06:13.732Z Has data issue: false hasContentIssue false

Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Jing-Hong Li
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Olga M. Kryliouk
Affiliation:
Dept. of Chemical Engineering, University of Florida, Gainesville, FL 32611
Paul H. Holloway
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Timothy J. Anderson
Affiliation:
Dept. of Chemical Engineering, University of Florida, Gainesville, FL 32611
Kevin S. Jones
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

Microstructures of GaN films grown on the LiGaO2 by metalorganic chemical vapor deposition (MOCVD) have been characterized by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). TEM and HRTEM results show that high quality single-crystal wurtzite GaN films have been deposited on the LiGaO2 and that the GaN film and the LiGaO2 have the following orientation relationship: (2110)(0002)GaN ̂ (002)LiGaO2 ^ 5–8°. A higher density of threading dislocations and stacking faults have been observed near the GáN/LiGaO2 interface, even though the lattice mismatch of GaN to LiGaO2 is only ∼1%. Threading dislocations with burgers vector b=<0001> and b=a/3<1120> are predominant in the GaN films. Also the GaN films contain some columnar inversion domain boundaries (IDBs). Both TEM and HRTEM results reveal that there is an unexpected amorphous or nano-crystalline inter-layer between the GaN and the LiGaO2 with a thickness of 50–100 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S., Senoh, M., Iwasa, N., and Nagahama, S., Jpn. Appl. Phys. 34, L979 (1995).Google Scholar
2. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamda, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. Appl. Phys. 35, L74 (1996).Google Scholar
3. Northrup, J. E., Neugebauer, J., and Romano, L. T., Phys. Rev. Lett. Vol. 77, No. 1, 103, 1996.Google Scholar
4. Ponce, F. A., Chems, D., Young, W. T., and Steeds, J. W., Appl. phys. Lett., 69(6), 770 (1996)Google Scholar
5. Smith, D. J., Chandraskhar, D., Sverdlov, B., Botchkarev, A., Salvador, A. and Morkoc, H., Appl. phys. Lett., 67 (13), 1830 (1995)Google Scholar
6. Romano, L. T., Northrup, J. E. and O'Keefe, M. A., Appl. Phys. Lett., 69 (16), 2394, October 1996.Google Scholar
7. Nicholls, J. F. H., Gallagher, H., Henderson, B., Trager-Cowan, C., Middleton, P. G., O'Donnell, K. P., Cheng, T. S., Foxon, C. T., and Chai, B. H. T., Mat. Res. Soc. Symp. Proc, Vol 395, 1996, 535 Google Scholar
8. Limpijumnong, S., Lambrecht, W. R. L., Segali, B. and Kim, K., 1996 MRS Meeting Proc, Boston, 1996 (accepted)Google Scholar
9. Kryliouk, O. M., Dann, T. W., Anderson, T. J., Maruska, H. P., Zhu, L. D., Daly, J. T., Lin, M., Norris, P., B, , Chai, H. T., Kisker, D. W., Li, J. H., and Jones, K. S., 1996 MRS Meeting Proc, Boston, 1996 (accepted)Google Scholar
10. Wu, X. H., Brown, L. M., Kapolnek, D., Keller, S., Keller, B., Denbaars, S. P. and Speck, J. S., J. Appl. Phys. 80, 3228 (1996)Google Scholar
11. Liliental-Weber, Z., Sohn, H., Newman, N., and Washburn, J., J. Vac Sci. Technol., 13, 1578 (1995)Google Scholar
12. Sitar, Z., Paisley, M. J., Yan, B., and Davis, R. F., Mater. Res Soc. Symp. Proc 162, 537 (1990)Google Scholar
13. Sverdlov, B. N., Martin, G. A., Morkoc, H., and Smith, D. J., Appl. phys. Lett., 67, 2063 (1995)Google Scholar
14. Li, J. H., Kryliouk, O. M., Chai, B. H. T., Anderson, T. J. and Jones, K. S. (to be published)Google Scholar