Skip to main content Accessibility help
×
Home

Microstructure of Oxidized Ge0.78SiO.12 annealed in a Reducing Ambient

  • N.D. Theodore (a1), W.S. Liu (a2), D.Y.C. Lie (a2), T.K. Cams (a3) and K.L. Wang (a3)...

Abstract

Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2+ 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-Sio2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.

Copyright

References

Hide All
1. Park, J.S., Karunasiri, R.P.G., Wang, K.L., Rhee, S.S., and Chern, C.H., Appl. Phys. Lett. 54, 1564 (1989).
2. lyer, S.S., Patton, G.L., J.Stork, M.C., Meyerson, B.S., and Harame, D.L., IEEE Trans. Electron Devices 36, 2043 (1989).
3. Margalit, S., Bar-Lev, A., Kuper, A.B., Aharoni, H., and Neugroschel, A., J. Cryst. Growth 17, 288 (1972).
4. LeGoues, F.K., Rosenberg, R., Nguyen, T., Himpsel, F., and Meyerson, B.S., J. Appl. Phys. 65, 1724 (1989).
5. Paine, D.C., Caragianis, C., and Schwartzman, A.F.,J. Appl. Phys. 70, 5076 (1991).
6. Park, S.-G., Liu, W.S., and Nicolet, M.-A., J. Appl. Phys. 75,1764 (1994).
7. Liu, W.S., Chen, J.S., and Nicolet, M.-A., J. Appl. Phys. 72, 4444 (1992).
8. Liu, W.S., Chen, J.S., D.Lie, Y.C., and Nicolet, M.-A., Appl. Phys. Lett. 63,1405 (1993).

Microstructure of Oxidized Ge0.78SiO.12 annealed in a Reducing Ambient

  • N.D. Theodore (a1), W.S. Liu (a2), D.Y.C. Lie (a2), T.K. Cams (a3) and K.L. Wang (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed