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Microstructure of Oxidized Ge0.78SiO.12 annealed in a Reducing Ambient

Published online by Cambridge University Press:  15 February 2011

N.D. Theodore ,
W.S. Liu ,
D.Y.C. Lie ,
T.K. Cams  and
K.L. Wang
N.D. Theodore
Affiliation:
Motorola Inc., Mesa, Arizona, AZ 85202
W.S. Liu
Affiliation:
California Institute of Technology, Pasadena, California 91125
D.Y.C. Lie
Affiliation:
California Institute of Technology, Pasadena, California 91125
T.K. Cams
Affiliation:
University of California, Los Angeles, CA 90024
K.L. Wang
Affiliation:
University of California, Los Angeles, CA 90024
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Abstract

Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2+ 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-Sio2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 127
Copyright
Copyright © Materials Research Society 1995

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References

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