- Cited by 19
Ponce, F. A. Galloway, S. A. Goetz, W. and Kern, R. S. 1997. Cathodoluminescence Studies of InGaN Quantum Wells. MRS Proceedings, Vol. 482, Issue. ,
Chichibu, S. Cohen, D. A. Mack, M. P. Abare, A. C. Kozodoy, P. Minsky, M. Fleischer, S. Keller, S. Bowers, J. E. Mishra, U. K. Coldren, L. A. Clarke, D. R. and DenBaars, S. P. 1998. Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes. Applied Physics Letters, Vol. 73, Issue. 4, p. 496.
Brillson, L. J. Levin, T. M. Jessen, G. H. and Ponce, F. A. 1999. Localized states at InGaN/GaN quantum well interfaces. Applied Physics Letters, Vol. 75, Issue. 24, p. 3835.
Cherns, D. Barnard, J. and Ponce, F.A. 1999. Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography. Solid State Communications, Vol. 111, Issue. 5, p. 281.
Kern, R.S. Götz, W. Chen, C.H. Liu, H. Fletcher, R.M. and Kuo, C.P. 1999. Electroluminescence I. Vol. 64, Issue. , p. 129.
Benamara, M. Liliental-Weber, Z. Swider, W. Washburn, J. Dupuis, R. D. Grudowski, P. A. Eiting, C. J. Yang, J. W. and Khan, M. A. 1999. Atomic Scale Analysis of InGaN Multi-Quantum Wells. MRS Proceedings, Vol. 572, Issue. ,
Levin, T. M. Jessen, G. H. Ponce, F. A. and Brillson, L. J. 1999. Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue. 6, p. 2545.
Cherns, D. Barnard, J. and Mokhtari, H. 1999. Characterisation of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopy. Materials Science and Engineering: B, Vol. 66, Issue. 1-3, p. 33.
Brillson, L.J Young, A.P Levin, T.M Jessen, G.H Schäfer, J Yang, Y Xu, S.H Cruguel, H Lapeyre, G.J Ponce, F.A Naoi, Y Tu, C McKenzie, J.D and Abernathy, C.R 2000. Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces. Materials Science and Engineering: B, Vol. 75, Issue. 2-3, p. 218.
Henley, S. J. and Cherns, D. 2000. The Influence of Defects and Piezoelectric Fields on the Luminescence from InGaN/GaN Single Quantum Wells. MRS Proceedings, Vol. 639, Issue. ,
Moon, Yong-Tae Kim, Dong-Joon Song, Keun-Man Choi, Chel-Jong Han, Sang-Heon Seong, Tae-Yeon and Park, Seong-Ju 2001. Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells. Journal of Applied Physics, Vol. 89, Issue. 11, p. 6514.
Cherns, D. Henley, S. J. and Ponce, F. A. 2001. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence. Applied Physics Letters, Vol. 78, Issue. 18, p. 2691.
Henley, S.J. Bewick, A. Cherns, D. and Ponce, F.A. 2001. Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells. Journal of Crystal Growth, Vol. 230, Issue. 3-4, p. 481.
Miller, E. J. and Yu, E. T. 2001. Influence of the dipole interaction energy on clustering in InxGa1−xN alloys. Applied Physics Letters, Vol. 78, Issue. 16, p. 2303.
Bertram, F. Srinivasan, S. Geng, L. Ponce, F. A. Riemann, T. and Christen, J. 2002. Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1−xN layers. Applied Physics Letters, Vol. 80, Issue. 19, p. 3524.
Henley, S. J. and Cherns, D. 2003. Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose. Journal of Applied Physics, Vol. 93, Issue. 7, p. 3934.
Zhou, X. Yu, E. T. Florescu, D. I. Ramer, J. C. Lee, D. S. Ting, S. M. and Armour, E. A. 2005. Imaging of thickness and compositional fluctuations in InGaN∕GaN quantum wells by scanning capacitance microscopy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue. 4, p. 1808.
Zhou, X. Yu, E. T. Florescu, D. I. Ramer, J. C. Lee, D. S. Ting, S. M. and Armour, E. A. 2005. Observation of In concentration variations in InGaN∕GaN quantum-well heterostructures by scanning capacitance microscopy. Applied Physics Letters, Vol. 86, Issue. 20, p. 202113.
Laaksonen, K. Ganchenkova, M.G. and Nieminen, R.M. 2006. Minor component ordering in wurtzite and. Physica B: Condensed Matter, Vol. 376-377, Issue. , p. 502.
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The microstructure of lnxGal-xN quantum wells with intermediate indium concentrations (x = 0.28 and 0.52) has been studied using transmission electron microscopy. High-resolution lattice images and dark-field images taken under high tilt conditions indicate that the quantum wells are inhomogeneous in character. Most of the area of the quantum wells is pseudomorphic with the GaN adjacent layer. However, misfit dislocations are sometimes observed, although with an inhomogeneous distribution. Strained cluster regions are observed in the high-indium concentration quantum wells, with dimensions ranging fi'om 3 to 10 nm in diameter. Evidence is presented suggesting the extent of clustering depends on the exact orientation of the growth surface which is related to the columnar nature of the GaN/sapphire epitaxy.
Hide All1. See, e.g., Ponce, F. A. and Bour, D. B., Nature 386, 351, (1997).2. Nakamura, S. and Mukai, T., Jpn. J. Appl. Phys. 31, L1457 (1992).3. Ho, I-hsiu and Stringfellow, G. B., Appl. Phys. Lett. 69, 2701 (1996).4. Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).5. Narukawa, Y., Kawakami, Y., Fujita, S., Fujita, S., and Nakamura, S., Phys. Rev. B 55, R1938 (1997).6. Narukawa, Y., Kawakami, Y., Funato, M., Fujita, S., Fujita, S., and Nakamura, S., Appl. Phys. Lett. 70, 981 (1997).7. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 70, 2753 (1997).8. Hirsch, P., Howie, A., Nicholson, R. B., Pashley, D. W., Whelan, M. J., Electron Microscopy of Thin Crystals (Krieger, New York 1965), Chap. 7.9. Frank, F. C. and van der Merwe, J. W., Proc. Roy. Soc. London, Ser. A 198, 205 (1949).
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