Hostname: page-component-8448b6f56d-sxzjt Total loading time: 0 Render date: 2024-04-19T16:36:30.351Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

Published online by Cambridge University Press:  25 February 2011

H. H. Hung ,
K. S. Liang ,
C. H. Lee  and
T.-M. Lu
H. H. Hung
Affiliation:
Exxon Research & Engineering Co., Annandale, NJ 08801 Synchrotron Radiation Research Center, Taiwan, R.O.C.
K. S. Liang
Affiliation:
Exxon Research & Engineering Co., Annandale, NJ 08801
C. H. Lee
Affiliation:
Exxon Research & Engineering Co., Annandale, NJ 08801 Synchrotron Radiation Research Center, Taiwan, R.O.C.
T.-M. Lu
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
Get access

Abstract

We report the results of our x-ray diffraction studies on epitaxial Al(111)/Si(111) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 301
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Choi, C.H., Harper, R.A., Yapsir, A.S., and Lu, T.-M., Appl. Phys. Lett. 51, 1992 (1987).Google Scholar
2. Jin, H.-S., Yapsir, A.S., Lu, T.-M., Gibson, W.M., Yamada, I., and Takagi, T., Appl. Phys. Lett. 50, 1062 (1987).Google Scholar
3. LeGoues, F.K., Krakow, W., and Ho, P.S., Philos. Mag. A53, 833 (1986).Google Scholar
4. Lu, T.-M., Bai, P., Yapsir, A.S., Chang, P.-H., and Shaffner, T.J., Phys. Rev. B39, 9584 (1989).Google Scholar
5. Fuoss, P.H., Liang, K.S., and Eisenberger, P., in Synchrotron Radiation Research: Advances in Surface and Interface Science, edited by Bachrach, R.Z. (Plenum Press 1990).Google Scholar
6. Liang, K.S., D’Amico, K.L., Lee, C.H., and Sheu, E.Y., Phys. Rev. Lett. 65, 3025 (1990).Google Scholar
7. See, for example, Bak, P., Rep. Prog. Phys. 45, 587 (1982).Google Scholar