(Ba, Sr)TiO3 films were deposited on Pt-coated SiO2/Si wafers by the MOCVD method. Experiments were conducted to investigate the mechanisms of nucleation and growth. It was observed that the diameter of the (Ba, Sr)TiO3 grains is established in the early stages of nucleation and does not increase substantially during the growth of the film. By controlling the process conditions, it is possible to control the final microstructure and improve the electrical properties of (Ba, Sr)TiO3 films. I-V and C-V measurements show that (Ba, Sr)TiO3 films with a thickness of approximately 15nm can produce a charge storage density of >120 fF/μm2 with a leakage current density of < 10 nA/cm2 at IV, making them suitable for Gigabit-scale DRAM applications.