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Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

  • Wolfhard Beyer (a1)

Abstract

The effusion of the rare gases neon and helium, as well as of hydrogen, was studied for plasma deposited (boron-doped and undoped) hydrogenated amorphous silicon films, grown at various substrate temperatures. Rare gas atoms were incorporated into the material during the growth process or by ion implantation. The results suggest that helium and neon effusion spectra give information on the material microstructure.

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Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

  • Wolfhard Beyer (a1)

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