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Microstructure and the Development of Electromigration Damage in Narrow Interconnects

  • A. L. Greer (a1) and W. C. Shih (a1)

Abstract

The microstructure in narrow (1.1, 1.5 and 2.1 μm) unpassivated lines of Al-4wt.% Cu is found to be ‘near-bamboo’, with Al2Cu grains being a significant feature correlated with thermal hillocking and with the development of damage on electromigration. The development of damage is shown to be closely related to the median time to failure, with its initiation being at a rate proportional to the square of the current density. The mechanisms of damage development are discussed, with particular reference to near-bamboo, two-phase microstructures.

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Microstructure and the Development of Electromigration Damage in Narrow Interconnects

  • A. L. Greer (a1) and W. C. Shih (a1)

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