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Microstructure and Electrical Properties of PbTe Based Films Prepared by Pulsed Laser Deposition

  • Anne Dauscher (a1), Bertrand Lenoir (a1), Alexandre Jacquot (a1), Christine Bellouard (a1) and Maria Dinescu (a2)...

Abstract

Lead telluride thin films have been grown on BaF2(111) substrates by pulsed laser deposition from a Nd:YAG laser (λ = 532 nm) at very low temperature (150°C). The chemical composition, the morphology and the crystallographic structure of the layers depend strongly on the deposition conditions. Post-annealing treatments of the films also affect their microstructure. Preliminary electrical properties, conducted in the temperature range of 5 to 350 K, revealed that all the samples were n-type with Hall mobility values greater than 104 cm2/V.s at low temperatures.

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