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Microstructural Rearrangement in PZT(52/48) Thin Film Prepared By Reactive Cosputtering on Pt on Si(100)

Published online by Cambridge University Press:  25 February 2011

Woong Kil Choo ,
Kwang Young Kim ,
Hyo Jin Kim  and
Sung Tae Kim
Woong Kil Choo
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-Dong, Yusung-Gu, Taejon, 305–701, Korea
Kwang Young Kim
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-Dong, Yusung-Gu, Taejon, 305–701, Korea
Hyo Jin Kim
Affiliation:
Department of Electronic Materials Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-Dong, Yusung-Gu, Taejon, 305–701, Korea
Sung Tae Kim
Affiliation:
Lab 2, GoldStar Central Research Laboratories, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137–140, Korea
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Abstract

The experimental conditions which render the exact stoichiometry of PZT(52/48) thin films deposited on Pt thin film on Si(100) by reactive cosputtering have been investigated. As-deposited PZT is amorphous containing α-PbO2 microcrystallites. As annealing temperature increases, the amorphous PZT films crystallize into pyrochlore and perovskite with pseudo-cubic structure in sequence. The perovskite PZT annealed above 750 °C evolves into a phase of morphotropic phase boundary. In the perovskite PZT thin films, the leakage current increases with annealing time. Also, the dielectric constant increases with film thickness and annealing temperature, which is discussed in conjunction with PZT/Pt interfacial morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 513
Copyright
Copyright © Materials Research Society 1993

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References

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