Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-17T05:37:41.472Z Has data issue: false hasContentIssue false

Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth (SEG)

Published online by Cambridge University Press:  21 February 2011

Haw Yen
Affiliation:
Schools of Materials Engineering, Purdue University, West Lafayette, IN 47907
Rashid Bashir
Affiliation:
Electrical Engineering, Purdue University, West Lafayette, IN 47907
Eric P. Kvam
Affiliation:
Schools of Materials Engineering, Purdue University, West Lafayette, IN 47907
Gerold W. Neudeck
Affiliation:
Electrical Engineering, Purdue University, West Lafayette, IN 47907
Get access

Abstract

Selective epitaxial growth has been used to produce electronically isolated devices on patterned-oxide Si substrates. The oxide / silicon interfaces in such materials are often associated with regions of poor device performance. In this study, the extended defects at the interfacial regions are examined by transmission electron microscopy, and the defects observed are correlated to electronic behavior of diodes fabricated in the selectively grown Si region. Process modifications were made to reduce the density of these defects. The nature of the successful techniques for defect reduction suggests that a large portion of the defects were due to thermal expansion mismatch, and may be avoidable.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 ] Sze, S. M., Semiconductor Devices - Physics and Technology, (Wiley, 1985).Google Scholar
2 ] Jastrzebski, L., J. Crystal Growth, 63, 493 (1983).CrossRefGoogle Scholar
3 ] Sze, S. M., VLSI Technology, (McGraw-Hill, 1988).Google Scholar
4 ] Ruska, S. W., Microelectronic Processing, (McGraw-Hill, 1987).Google Scholar
5 ] Grove, A. S., Physics and Technology of Semiconductor Devices, (Wiley, 1967).Google Scholar
6 ] Schubert, P. J. and Neudeck, G. W., IEEE Elec. Dev. Lett., 11(5), 181 (1990).Google Scholar
7 ] Ogura, A. and Fujimoto, Y., Appl. Phys. Lett., 55(21), 2205 (1989).Google Scholar
8 ] Claassen, W. A. P. and Bloem, J., J. Electrochem. Soc., 127, 1836 (1980).Google Scholar
9 ] Bashir, R., Ph.D. (EE) Thesis, Purdue University (Dec. 1992).Google Scholar
10 ] Friedrich, J. A. and Neudeck, G. W., J. Appl. Phys., 64(7), 3538 (1988).Google Scholar
11 ] Brekel, C. H. J. Van Den, J. Crystal Growth, 23, 259 (1974).Google Scholar
12 ] Bradbury, D. R., Kamins, T. I. and Tsao, C. W., J. Appl. Phys., 55(2), 519 (1984).Google Scholar
13 ] Ishitani, A., Kitajima, H., Endo, N. and Kasai, N., Jap. J. Appl. Phys., 1267 (1985).Google Scholar
14 ] Drowley, C. I., Reid, G. A. and Hull, R., Appl. Phys. Lett., 52(7), p. 546 (1988).Google Scholar
15 ] Schubert, P. J. and Neudeck, G. W., IEEE Trans. Elec. Dev., 17(11), 2336 (1990).Google Scholar
16 ] Kitajima, H., Fujimoto, Y., Kasai, N., Ishitani, A. & Endo, N., J Crystal Gr., 98, 264 (1989).Google Scholar