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Microstructural Development of Dispersion Strengthened Cu Thin Films

Published online by Cambridge University Press:  10 February 2011

D. Weiss ,
O. Kraft  and
E. Arzt
D. Weiss
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
O. Kraft
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, Seestr. 92, D-70174 Stuttgart, Germany
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Abstract

The internal oxidation method is applied for the first time to produce a fine dispersion of second phase particles in thin films. A processing route is presented which includes ultra-high vacuum magnetron sputtering of about 1 μm thick alloy films onto Si substrates followed by in situ annealing and oxidation. Two different Cu-base alloys are examined, Cu-Y and Cu-Al, in which the extent of miscibilitiy differs significantly. This has considerable influence on the grain growth behavior. Nanoindention and wafer-curvature experiments show a drastic improvement of both room-temperature and high-temperature strength. Phenomena well known from bulk oxide-dispersion strengthened (ODS) alloys are found to appear in the thin films as well: Results on abnormal grain growth and the formation of creep voids are presented and discussed in terms of particle effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 562: Symposium L – Polycrystalline Metal & Magnetic Thin Films , 1999 , 257
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Venkatraman, R. and Bravman, J. C., J. Mater. Res. 7(8), p. 2040–2048 (1992).Google Scholar
2. Keller, R.-M., Baker, S. P., and Arzt, E., J. Mater. Res. 13(5), p. 1307–1317 (1998).Google Scholar
3. Mullins, W. W., Acta Met. 6, p. 414–427 (1958).Google Scholar
4. Majumder, K. S., Thin Solid Films 42, p. 343–352 (1977).Google Scholar
5. Oberle, R. R., Scanlon, M. R., Cammarata, R. C., and Searson, P. C., Appl. Phys. Lett. 66(1), p. 19–21 (1995).Google Scholar
6. Meijering, J. L., in Advances in Materials Research Vol. 5, edited by Herman, H., Wiley-Interscience, New York, 1971, p. 1–81.Google Scholar
7. Stoney, G. G., Proc. R. Soc. A82, p. 172–175 (1909).Google Scholar
8. Weiss, D., Müillner, P., Thompson, C. V. and Arzt, E. in Grain Growth in Polycrystalline Materials III, edited by Weiland, H., Adams, B. L. and Rollett, A. D. (Proc. of Third International Conference on Grain Growth, Pittsburgh, PA, 1998), p. 537–542.Google Scholar
9. Cocks, A. C. F. and Ashby, M. F., Prog. Mat. Sci. 27, p. 189–244 (1982).Google Scholar