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Microstructural and Microchemical Characterisation of CuInSe2 Ingots Grown by the Vertical Bridgman Technique

Published online by Cambridge University Press:  03 September 2012

C. A. Mullan ,
S. M. Casey ,
C. Jones ,
C. J. Kiely ,
M. Imanieh  and
R. D. Tomlinson
C. A. Mullan
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, England.
S. M. Casey
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, England.
C. Jones
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, England.
C. J. Kiely
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, England.
M. Imanieh
Affiliation:
Department of Electronic and Electrical Engineering, The University of Salford, England.
R. D. Tomlinson
Affiliation:
Department of Electronic and Electrical Engineering, The University of Salford, England.
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Abstract

The microstructure and microchemistry of a number of melt textured CuInSe2 ingots prepared from a variety of starting charge compositions have been investigated using a combination of TEM, EPMA and Auger spectroscopy. If a stoichiometric starting mixture is used, In-rich and Cu-rich precipitates are found at the first and last to freeze zones of the ingot respectively, accompanied by an intervening mid-portion of inclusion free (although slightly off-stoichiometry) CuInSe2 We have found that in order to achieve an optimum matrix composition, a Cu-rich charge is required; however, this leads to a fine distribution of copper selenide particles throughout the ingot. If the starting charge is In-rich, then the boule contains In-rich precipitates and the matrix composition is In-rich and Cu-deficient. These observations are correlated with the observed electrical characteristics of the boules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 117
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Neumann, H., Cryst. Res. Technol. 18, 483, (1983).Google Scholar
2. Kiely, C. J., Pond, R. C., Kenshole, G. and Rockett, A., Phil. Mag. A, 63, 1249, (1991).CrossRefGoogle Scholar
3. Rinçon, C., Bellabarba, C., Gonzalez, J. and Sanchez-Perez, G., Solar Cells, 16, 335, (1986).CrossRefGoogle Scholar
4. Tomlinson, R. D., Solar Cells, 16, 17, (1986).Google Scholar
5. Fearheiley, M. L., Solar Cells, 16, 96, (1986).Google Scholar
6. Tomlinson, R. D., PVSEC, Sydney Australia, 467, (1989).Google Scholar
7. Masse, G., J. Appl. Phys., 68, 2206, (1990).Google Scholar
8. Tseng, B. H. and Wert, C. A., J. Appl. Phys., 65, 2255, (1989).Google Scholar
9. Frangis, N., Van Tendeloo, G., Manolikas, C., Van Landuyt, J. and Amelinckx, S., Status Solidi, A96, 53, (1986).Google Scholar