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A Microscopical and Statistical Study of Electromigration Damage and Failure in Al-4wt.%Cu Tracks

  • W. C. Shih (a1), T. C. Denton (a2) and A. L. Greer (a1)

Abstract

We report a statistical analysis of electromigration (EM) induced damage and failure in unpassivated 1.4 mm long Al-4wt%Cu interconnects. The populations of damage sites of various types observed microscopically in life-tested samples are correlated with track width (1.1, 1.5 and 2.1 μm), temperature (200, 230, 260 and 300°C), current density (1, 2 and 3 × 1010 A m−2) and lifetest data. Some implications for damage and failure mechanisms are discussed.

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References

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1. Greer, A.L. and Shih, W.C., “Microstructure and the development of electromigration damage in narrow interconnects”, in this volume.

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