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Microscopic Study Of The Hydrogen Diffusion In III-V Semiconductors

  • A. Burchard (a1), M. Deicher (a1), D. Forkel-Wirth (a2), M. Knopf (a1), R. Magerle (a3), A. STötzler (a1), V. N. Fedoseyev (a4), V. I. Mishin (a4) and The Isolde-Collaboration (a2)...

Abstract

We report on experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, GaAs, and InAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of 117Cd to 117In, H is no longer bound to an acceptor and can diffuse freely. This diffusion has been observed by perturbed yy angular correlation (PAC) spectroscopy. At 10 K, the occupation of two different lattice sites by hydrogen has been observed. First results on the diffusion of hydrogen will be discussed.

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Microscopic Study Of The Hydrogen Diffusion In III-V Semiconductors

  • A. Burchard (a1), M. Deicher (a1), D. Forkel-Wirth (a2), M. Knopf (a1), R. Magerle (a3), A. STötzler (a1), V. N. Fedoseyev (a4), V. I. Mishin (a4) and The Isolde-Collaboration (a2)...

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