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Microscopic Model of Metal-Semiconductor Contacts and Semiconductor Heterojunctions

Published online by Cambridge University Press:  26 February 2011

C. Mailhiotand  and
C. B. Duke
C. Mailhiotand
Affiliation:
Xerox Webster Research Center, 800 Phillips Road, 0U4–38D Webster, NY 14580
C. B. Duke
Affiliation:
Xerox Webster Research Center, 800 Phillips Road, 0U4–38D Webster, NY 14580
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Abstract

A microscopic many-electron model is utilized to calculate the self-consistent one-electron potential in the vicinity of a metal-semiconductor or semiconductor-semiconductor interface. The boundary conditions ensuring thermal, mechanical and electron-transfer equilibrium are imposed explicitly. Numerical calculations predict the validity of Schottky's phenomenological boundary condition for metal-semiconductor contacts and the applicability of the electron affinity rule for semiconductor heterojunctions. The occurrence of interfacial atomic rearrangements and/or chemical reactions is incorporated into the model via the inclusion of charge centers near the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 493
Copyright
Copyright © Materials Research Society 1986

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References

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