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Micro-Photoluminescence from V-shape inverted pyramid in HVPE Grown GaN Film

Published online by Cambridge University Press:  01 February 2011

Chao-Kuei Lee ,
Y-B Chen ,
Shu-Chen Chang ,
Ci-Ling Pan  and
S. C. Wang
Chao-Kuei Lee
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University 1001 Ta Hsueh Road, Hsinchu, TAIWAN 300
Y-B Chen
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University 1001 Ta Hsueh Road, Hsinchu, TAIWAN 300
Shu-Chen Chang
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University 1001 Ta Hsueh Road, Hsinchu, TAIWAN 300
Ci-Ling Pan
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University 1001 Ta Hsueh Road, Hsinchu, TAIWAN 300
S. C. Wang
Affiliation:
Institute of Electro-Optical Engineering, National Chiao Tung University 1001 Ta Hsueh Road, Hsinchu, TAIWAN 300
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Abstract

We report the room-temperature micro-luminescence images from V-shaped inverted pyramids in undoped GaN films grown on (0001) sapphire substrate by hybrid vapor phase epitaxy. As the excitation laser spot at 325 nm was translated from the surface toward the center of the inverted pyramid along its slope, the center wavelength of the PL peak shows a trend of monotonic red-shift of from 373.9 nm to 379.1 nm. This could be attributed to the 3-dimensional release of stress and associated decrease of build-in piezoelectric field in the V-defects. A distinct and strong emission at 386.7 nm was observed at the apex of the V-defect. This could be originated from the threading dislocation at the onset of the defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K1.2
Copyright
Copyright © Materials Research Society 2002

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