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Microcrystalline Silicon Solar Cells at Higher Deposition Rates by the VHF-GD

  • P. Torres (a1), J. Meier (a1), M. Goetz (a1), N. Beck (a1), U. Kroll (a1), H. Keppner (a1) and A. Shah (a1)...

Abstract

A 7.7 % single junction cell efficiency for an entirely microcrystalline silicon (μc-SiH) device has recently been reported by our group [1]. This was achieved by applying the purifier technique, a technique which is indeed easier to handle than the earlier used “microdoping” approach. The purpose of the present paper is twofold: First to show in detail the impact on device performance when a gas purifier is used; and second to illustrate that the deposition rate of the active, absorbing i-layer can be increased from the former 1.55 Å/s up to 4.3 Å/s while still maintaining reasonable device performances. In the latter case a first n-i-p solar cell structure on an aluminium sheet could be fabricated with an efficiency of 4.9 %.

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