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Micro Crystalline Silicon TFT by the Metal Capped Diode Laser Thermal Annealing Method

Published online by Cambridge University Press:  01 February 2011

Toshiaki Arai ,
Narihiro Morosawa ,
Yoshio Inagaki ,
Koichi Tatsuki  and
Tetsuo Urabe
Toshiaki Arai
Affiliation:
Toshiaki.Arai@jp.sony.com, Sony corporation, Corporate R&D, 4-14-1 Asahi-cho, Atsugi-shi, 243-0014, Japan, +81-46-202-8832, +81-46-202-6093
Narihiro Morosawa
Affiliation:
Narihiro.Morosawa@jp.sony.com, Sony corporation, Corporate R&D, 4-14-1 Asahi-cho, Atsugi-shi, 243-0014, Japan
Yoshio Inagaki
Affiliation:
Yoshio.Inagaki@jp.sony.com, Sony corporation, Corporate R&D, 4-14-1 Asahi-cho, Atsugi-shi, 243-0014, Japan
Koichi Tatsuki
Affiliation:
Koichi.Tatsuki@jp.sony.com, Sony corporation, Corporate R&D, 4-14-1 Asahi-cho, Atsugi-shi, 243-0014, Japan
Tetsuo Urabe
Affiliation:
Tetsuo.Urabe@jp.sony.com, Sony corporation, Corporate R&D, 4-14-1 Asahi-cho, Atsugi-shi, 243-0014, Japan
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Abstract

A novel crystallization method for silicon based thin film transistor (TFT) is proposed for the fabrication of high performance large size flat panel displays. In spite of using almost the same TFT fabrication process as that of hydrogenated amorphous silicon (a-Si:H) TFT, the proposed metal capped laser thermal annealing method realizes the formation of uniform and dense micro crystalline silicon (μc-Si), and provides mobility of 3.1 cm2/V•s, threshold voltage (ΔVth) of 2.3 V, and sub threshold slope (S) of 0.93 V/decade. Moreover, proposed stacked n+ amorphous silicon structure realizes extremely low off-current maintaining high on-current. As the reliability of TFT, a threshold voltage sift (ΔVth) under the high current bias stress test (BTS) condition was investigated, and realized the assumed ΔVth of +1.77 V after 100,000 hours stress of 10 μA and 50°C. This value is 2 orders smaller than that of a-Si:H TFT and only three times larger than that of low temperature poly silicon (LTPS) TFT.

We believe that our μc-Si TFT technology is the suitable solution for the high quality, large size flat panel display mass-production.

Keywords

laser annealingcrystallineSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A09-02
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Robert, S. Sposili and James, S. Im Appl. Phys. Lett. 69, p.2864 (1996).Google Scholar
2. Hultman, L. Robertsson, A. Hentzell, H.T.G. Engstrom, I. and Psaras, P.A, J. Appl. Phys., 62, p.3647 (1987).Google Scholar
3. Chung, H. K. and Lee, K. Y. SID .05 Digest, p.956 (2005).Google Scholar
4. Lee, S.J. Shin, D.H. Bae, B.S. and Kim, H.J. AMLCD 2004, p.41 (2004).Google Scholar
5. Arai, T. Morosawa, N. Hiromasu, Y. Hidaka, K. Nakayama, T. Makita, A. Toyota, M. Hayashi, N. Yoshimura, Y. Sato, A. Namekawa, K. Inagaki, Y. Umezu, N. and Tatsuki, K. SID .07 Digest, p.1370 (2007).Google Scholar
6. Morosawa, N. Nakayama, T. Arai, T. Inagaki, Y. Tatsuki, K. and Urabe, T. IDW .07, p.71 (2007).Google Scholar