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MeV Implantation of Gallium Arsenide

Published online by Cambridge University Press:  21 February 2011

H. Kanber ,
J. C. Chen  and
M. J. Barger
H. Kanber
Affiliation:
Hughes Aircraft Company, Microwave Products Division, 3100 W Lomita Blvd., Torrance, CA 90509
J. C. Chen
Affiliation:
Hughes Aircraft Company, Microwave Products Division, 3100 W Lomita Blvd., Torrance, CA 90509
M. J. Barger
Affiliation:
Hughes Aircraft Company, Microwave Products Division, 3100 W Lomita Blvd., Torrance, CA 90509
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Abstract

We investigated n-type MeV implants into semi-insulating GaAs to fabricate fully implanted varactor diodes for monolithic millimeter-wave applications. Single and multiple implants of Si from 6 to 2.5 MeV and 6 MeV S implants in GaAs were studied before and after capless furnace annealing and rapid thermal annealing by chemical profiling using secondary ion mass spectrometry (SIMS) and electrochemical and traditional differential capacitance-voltage profiling. A buried active layer at a depth of 2.8 μ.m with a peak carrier concentration of 2.5 × 1018 cm-3 was achieved by using 6 MeV Si + 4 MeV Si + 6 MeV S implants and rapid thermal annealing them at a temperature 1050°C for 10 seconds. The chemical profiles are correlated to the electrical profiles to determine activation and annealing behavior of MeV Si and Simplants in semi-insulating GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 185
Copyright
Copyright © Materials Research Society 1989

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References

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