Skip to main content Accessibility help
×
Home

MeV Boron Implantation and Masking

  • James P. Lavine (a1), A. J. Filo (a2), D. L. Losee (a1), P. A. Guidash (a1), S.-T. Lee (a2), G. H. Braunstein (a2), S. L. Kosman (a1) and H. Kyan (a1)...

Abstract

Boron depth distributions are reported for MeV implants into silicon through a variety of masking materials. Silicon is implanted with boron through a 0.1-µm-thick layer of thermally grown silicon dioxide. Secondary ion mass spectrometry (SIMS) shows the projected ranges agree within 10% with data reported in the literature and with results from the computer program TRIM. Silicon dioxide, photoresist, and metal layers are used to mask the high-energy boron implants. The SIMS results indicate that TRIM overestimates the energy loss of MeV boron ions as they pass through photoresist and/or silicon dioxide.

Copyright

References

Hide All
1 Terrill, K.W., Byrne, P.F., Hu, C., Cheung, N.W., Appl. Phys. Lett. 45, 977 (1984).
2 “High-energy Ion-implantation Technology,” Nikkei Microdevices, December, 94-121 (1991).
3 Parikh, N.R., Hunn, J.D., McGucken, E., Swanson, M.L., White, C.W., Rudder, R.A., Malta, D.P., Posthill, J.B., Markunas, R.J., Appl. Phys. Lett. 61, 3124 (1992).
4 Ziegler, J.F., Biersack, J.P., Littmark, U., The Stopping and Range of Ions in Solids (Pergamon Press, New York, 1985).
5 Wong, H., Deng, E., Cheung, N.W., Chu, P.K., Strathman, E.M., Strathman, M.D., Nucl. Instrum. Meth. Phys. Res. B21, 447 (1987).
6 Ohyu, K., Suzuki, T., Yamanaka, T., Natsuaki, N., Nucl. Instrum. Meth. Phys. Res. B 37/38, 749 (1989).
7 Thevenin, P., Grob, J.J., Stuck, R., Siffert, P., Nucl. Instrum. Meth. Phys. Res. B 62, 346 (1992).
8 Behar, M., Weiser, M., Kalbitzer, S., Fink, D., Grande, F.L., Nucl. Instrum. Meth. Phys. Res. B34, 316 (1988).
9 Zalm, P.C., Fontijn, G.M., Janssen, K.T.F., Vriezema, C.J., Nucl. Instrum. Meth. Phys. Res. B42, 397 (1989).
10 Mutikainen, R.H., Wong, H., Cheung, N.W., Nucl. Instrum. Meth. Phys. Res. B37/38, 716 (1989).
11 Spinelli, P., Cartier, A.M., Bruel, M., Nucl. Instrum. Meth. Phys. Res. B21, 452 (1987).
12 Downing, R.G., Lavine, J.P., Hossain, T.Z., Russell, J.B., Zenner, G.P., J. Appl. Phys. 6 7, 3652 (1990).
13 Stevie, F.A., Martin, E.P. Jr., Kahora, P.M., Cargo, J.T., Nanda, A.K., Harrus, A.S., Muller, A.J., Krautter, H.W., J. Vac. Sci. Technol. A 9, 2813 (1991).
14 Lindhard, J. and Scharff, M., Phys. Rev. 12 4, 128 (1961).
15 Goppelt, P., Biersack, J.P., Gebauer, B., Fink, D., Bohne, W., Wilpert, M., Wilpert, Th., Nucl. Instrum. Meth. Phys. Res. B 80/81, 62 (1993).

MeV Boron Implantation and Masking

  • James P. Lavine (a1), A. J. Filo (a2), D. L. Losee (a1), P. A. Guidash (a1), S.-T. Lee (a2), G. H. Braunstein (a2), S. L. Kosman (a1) and H. Kyan (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed