Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-20T00:13:32.224Z Has data issue: false hasContentIssue false
  • English
  • Français

Metrology Issues in Cu-Low-K Chemical Mechanical Planarization

Published online by Cambridge University Press:  11 February 2011

Parshuram B. Zantye ,
Arun K. Sikder ,
Swetha Thagella ,
Nivedita Gulati  and
Ashok Kumar
Parshuram B. Zantye
Affiliation:
Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620 Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Arun K. Sikder
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Swetha Thagella
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Nivedita Gulati
Affiliation:
Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620 Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Ashok Kumar
Affiliation:
Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620 Center for Microelectronics Research, University of South Florida, Tampa, FL 33620
Get access

Abstract

Ultra low-k materials used in Cu damascene process are inherently soft and weak in nature; hence the evaluation of tribological properties of these materials is an issue of paramount importance in the field of semiconductor fabrication. Chemical Mechanical Polishing (CMP) of these films is a major challenge due to their reduced modulus and cohesive strength. The objective of this research is to develop a strong understanding of the tribological properties of Cu ultra low-k dielectric materials for successful implementation in the semiconductor devices. The Cu ultra low-k systems are polished at different conditions of load and platen rotation and their polishing behavior is compared with the standard Cu-SiO2 system. The polishing behavior of Cu and the barrier Ta material is studied in order to effectively detect the end point of the Cu CMP process. Delamination studies, post process surface characterization using scanning electron microscopy and the reliability issues of these materials also come within the scope of this study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y9.7
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ryan, J.G., Geffken, R.M., Poulin, N.R., Paraszczak, J.R., IBM J. Res. Dev., 39 (1995) 371 Google Scholar
2. Jeng, S.P., Havemann, R.H., Chang, M.C., in Advanced Metallization for Devices and Circuits-Science, Technology and Manufacturability, edited by Murarka, S.P., Katz, A., K.N., Google Scholar
3. Shon-Roy, L., Solid State Technol. 43(6) (2000) 67 Google Scholar
4. Solid state Technol 41(10) (1998) 64 Google Scholar
5. Steigerwald, J. M., Murarka, S. P. and Gutmann, R. J., CMP of Microelectronic Materials, John Wiley and Sons Inc (1997)Google Scholar
6. Murarka, S.P., Verner, I.V., Gutmann, R.J., Copper-Fundamental Mechanisms for Microelectronic Applications, John Wiley & Sons, NY 2000 Google Scholar
7. Steigerwald, J.M., Murarka, S.P., Ho, J., Gutmann, R.J., Duquette, D.J., J. Vac. Sci. Technol. B 13 (1995) 2215 Google Scholar
8. Mahajan, U., Lee, S.-M., Singh, R.K., Symposium E Fundamentals and Materials Issues in Chemical-Mechanical Polishing of Materials. MRS Spring 2000 Meeting, San Francisco, CA, Apr. 24–28, 2000 Google Scholar
9. Wang, Y-L., Liu, C., Chang, S-T., Tsai, M-S., Feng, M-S., Tseng, W-T., Thin Solid Films 308–309 (1997) 550 Google Scholar
10. Wang, M.T., Tsai, M.S., Liu, C., Tseng, W.T., Chang, T.C., Chen, L.J., Chen, M.C., Thin Solid Films 308 (1997) 518 Google Scholar
11. Sikder, A. K., Giglio, Frank, Wood, John, Kumar, Ashok and Anthony, Mark,, Journal of Electronic Materials, Volume 30, Issue 12, Pages 1520–1526, December 2001 Google Scholar
12. Sikder, A. K. and Kumar, Ashok, Journal of Electronic Materials, Volume 31, Issue 10, Pages 1016–1021, October 2002 Google Scholar