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Methods of Modelling the C-V Profiles of Arbitrary Homopolar Heterostructures

Published online by Cambridge University Press:  28 February 2011

J.S. Rimmer ,
I.D. Hawkins ,
B. Hamilton  and
A.R. Peaker
J.S. Rimmer
Affiliation:
Department of Electrical Engineering and Electronics and Centre for Electronic Materials, University of Manchester Institute of Science and Technology, Manchester M60 1QD, United Kingdom
I.D. Hawkins
Affiliation:
Department of Electrical Engineering and Electronics and Centre for Electronic Materials, University of Manchester Institute of Science and Technology, Manchester M60 1QD, United Kingdom
B. Hamilton
Affiliation:
Department of Electrical Engineering and Electronics and Centre for Electronic Materials, University of Manchester Institute of Science and Technology, Manchester M60 1QD, United Kingdom
A.R. Peaker
Affiliation:
Department of Electrical Engineering and Electronics and Centre for Electronic Materials, University of Manchester Institute of Science and Technology, Manchester M60 1QD, United Kingdom
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Abstract

Two methods have been developed for simulating the C-V profiles of semiconductors. Each method uses a different approach to the problem so that, between them, degeneracy, interface charge, deep levels, low temperatures and quantum effects may be included. Computer run times depend on the complexity of the structure being modelled but are generally quite fast. The profile for a typical single heterostructure may be obtained on a desk-top HP200 in less than two minutes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 475
Copyright
Copyright © Materials Research Society 1989

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