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Methods of Modelling the C-V Profiles of Arbitrary Homopolar Heterostructures

  • J.S. Rimmer (a1), I.D. Hawkins (a1), B. Hamilton (a1) and A.R. Peaker (a1)

Abstract

Two methods have been developed for simulating the C-V profiles of semiconductors. Each method uses a different approach to the problem so that, between them, degeneracy, interface charge, deep levels, low temperatures and quantum effects may be included. Computer run times depend on the complexity of the structure being modelled but are generally quite fast. The profile for a typical single heterostructure may be obtained on a desk-top HP200 in less than two minutes.

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