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Method for Calculation of Dielectric Properties of Modulated Semiconducting Structures

Published online by Cambridge University Press:  10 February 2011

V. Yu. Mirovitskii  and
O. Yu. Mashtakov
V. Yu. Mirovitskii
Affiliation:
Institute for Power Engineering, Moldova Academy of Sciences, Academiei St.5, Kishinev 277028, Moldova, mash@center.moldova.su
O. Yu. Mashtakov
Affiliation:
Institute for Power Engineering, Moldova Academy of Sciences, Academiei St.5, Kishinev 277028, Moldova, mash@center.moldova.su
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Abstract

A new method for calculation the effects of composition modulation upon the dielectric properties of semiconductors is proposed. Specific consideration is carried out for ultrathin [001] oriented (AIIICV)m(BIIICV)n superlattices (SL). These SL are formally considered to result from complete A(B) atoms orderiig over a-sublattice in a hypothetical initial structure –bulk mixed crystal (AxB1−x)C with zincblende lattice and x = m/(m + n). From this point of view a variation in dielectric constants tensor (DCT) induced by the ordering can be calculated nearly in a spirit of the phenomenological Landau theory of second-order phase transitions. It is shown that the changes in spatial dispersion of the DCT are expressed through the coefficients at invariants in the expansion of SL thermodynamic potential in a power series of the order parameter components. The way is described for numerical estimation of the thermodynamic potential coefficients from microscopic model of the initial alloy which take account of spatial correlations in A(B) atoms distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 259
Copyright
Copyright © Materials Research Society 1996

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