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Metastability of Light-Induced Defects in Very Low Density of Gap States α- Si1-αCα:H Alloys

  • M. Sebastiani (a1), P. Fiorini (a1), F. Alvarez (a1), F. Pozzilli (a1), O. Pulci (a1) and F. Evangelisti (a1)...

Abstract

We have prepared silicon carbon alloys with Tauc's gap of 2.1 eV, low defect density (≃ 3–1015cm-3) and large photoconductivity (αPhotodark=105 in AM 1.5 illumination). On these samples light soaking induces a large number of metastable gap defects which are annealed out at 250 °C. We have studied the kinetics of defect formation varying the duration of light exposure and the light intensity. The experimental data are consistent with a bond breaking model (conversion of tail weak bonds into dangling bonds), provided that the actual occupation of tail states is taken into account.

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Metastability of Light-Induced Defects in Very Low Density of Gap States α- Si1-αCα:H Alloys

  • M. Sebastiani (a1), P. Fiorini (a1), F. Alvarez (a1), F. Pozzilli (a1), O. Pulci (a1) and F. Evangelisti (a1)...

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