Skip to main content Accessibility help
×
Home

Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire

  • Young-Woo Heo (a1), B. S. Kang (a2), L. C. Tien (a1), Y. Kwon (a1), J. R. La Roche (a2), B. P. Gila (a1), F. Ren (a2), S. J. Pearton (a1) and D. P. Norton (a1)...

Abstract

Single ZnO nanowire metal-oxide semiconductor field effect transistors (MOSFETs) were fabricated using nanowires grown by site selective Molecular Beam Epitaxy. When measured in the dark at 25°C, the depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼-3V and a maximum transconductance of order 0.3 mS/mm. Under ultra-violet (366nm) illumination, the drain-source current increase by approximately a factor of 5 and the maximum transconductance is ∼ 5 mS/mm. The channel mobility is estimated to be ∼3 cm2 /V.s, which is comparable to that reported for thin film ZnO enhancement mode MOSFETs and the on/off ratio was ∼25 in the dark and ∼125 under UV illumination.

Copyright

References

Hide All
1. Hoffman, R.L., J. Appl.Phys. 95, 5813 (2004).
2. Ohya, Y., Niwa, T., Ban, T., and Takahashi, Y., Jpn. J. Appl. Phys., Part 1 40, 297 (2001).
3. Kwon, Y., Li, Y., Heo, Y. W., Jones, M., Holloway, P. H., Norton, D. P., Park, Z. V., and Li, S., Appl. Phys. Lett. 84, 2685 (2004)
4. Masuda, S., Kitamura, K., Okumura, Y., and Miyatake, S., J. Appl. Phys. 93, 1624 (2003).
5. Hoffman, R. L., Norris, B. J., and Wager, J. F., Appl. Phys. Lett. 82, 733 (2003).
6. Carcia, P. F., McLean, R. S., Reilly, M. H., and Nunes, G. Jr, Appl. Phys. Lett. 82, 1117 (2003).
7. Wager, J. F., Science 300, 1245 (2003).
8. Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., and Hosono, H., Science 300, 1269 (2003)
9. Nishii, J., Hossain, F. M., Takagi, S., Aita, T., Saikusa, K., Ohmaki, Y., Ohkubo, I., Kishimoto, S., Ohtomo, A., Fukumura, T., Matsukura, F., Ohno, Y., Koinuma, H., Ohno, H., and Kawasaki, M., Jpn. J. Appl. Phys., Part 2 42, L347 (2003)
10. Ohta, Hiromichi and Hosono, Hideo, Materials Today 7, 42 (2004).
11. Hoffman, R.L., J. Appl.Phys. 95, 5813 (2004).
12. Ohya, Y., Niwa, T., Ban, T., and Takahashi, Y., Jpn. J. Appl. Phys., Part 1 40, 297 (2001).
13. Kwon, Y., Li, Y., Heo, Y. W., Jones, M., Holloway, P. H., Norton, D. P., Park, Z. V., and Li, S., Appl. Phys. Lett. 84, 2685 (2004)
14. Masuda, S., Kitamura, K., Okumura, Y., and Miyatake, S., J. Appl. Phys. 93, 1624 (2003).
15. Hoffman, R. L., Norris, B. J., and Wager, J. F., Appl. Phys. Lett. 82, 733 (2003).
16. Carcia, P. F., McLean, R. S., Reilly, M. H., and Nunes, G. Jr, Appl. Phys. Lett. 82, 1117 (2003).
17. Wager, J. F., Science 300, 1245 (2003).
18. Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., and Hosono, H., Science 300, 1269 (2003)
19. Ohta, Hiromichi and Hosono, Hideo, Materials Today 7, 42 (2004).
20. Wan, Q., Li, Q.H., Chen, Y.J., Wang, T.H., He, X.L., Li, J.P. and Lin, C.L., Appl.Phys.Lett. 84, 3654 (2004).
21. Wan, Q., Li, Q.H., Chen, Y.J., Wang, T.H., He, X.L., Gao, X.G. and Li, J.P., Appl.Phys.Lett. 84, 3654 (2004).
22. Keem, K., Kim, H., Kim, G.T., Lee, J.S., Min, B., Cho, K., Sung, M.Y. and Kim, S., Appl.Phys.Lett. 84, 4376 (2004).
23. Look, D.C., Mater. Sci. Eng. B80, 383 (2001).
24. Wang, Z.L., Materials Today 7, 26 (2004).
25. Heo, Y.W., Varadarjan, V., Kaufman, M., Kim, K., Norton, D.P., Ren, F. and Fleming, P.H., Appl.Phys.Lett. 81, 3046 (2002).
26. Norton, D.P., Heo, Y.W., Ivill, M.P., Ip, K., Pearton, S.J., Chisholm, M.F. and Steiner, T., Materials Today 7, 34 (2004)

Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire

  • Young-Woo Heo (a1), B. S. Kang (a2), L. C. Tien (a1), Y. Kwon (a1), J. R. La Roche (a2), B. P. Gila (a1), F. Ren (a2), S. J. Pearton (a1) and D. P. Norton (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed