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Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

Published online by Cambridge University Press:  10 February 2011

M. Yoshimoto ,
J. Saraie ,
T. Yasui ,
S. HA  and
H. Matsunami
M. Yoshimoto
Affiliation:
Dept. Electronics and Information Sci., Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan, yoshimot@dj.kit.ac.jp
J. Saraie
Affiliation:
Dept. Electronics and Information Sci., Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan, yoshimot@dj.kit.ac.jp
T. Yasui
Affiliation:
Dept. Electronic Sci. and Eng., Kyoto University, Sakyo, Kyoto 606-8501, Japan
S. HA
Affiliation:
Dept. Electronic Sci. and Eng., Kyoto University, Sakyo, Kyoto 606-8501, Japan
H. Matsunami
Affiliation:
Dept. Electronic Sci. and Eng., Kyoto University, Sakyo, Kyoto 606-8501, Japan
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Abstract

GaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 145
Copyright
Copyright © Materials Research Society 1999

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