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Metalorganic Magnetron Sputter Deposition of In1-xGax on (100)GaAs

Published online by Cambridge University Press:  28 February 2011

R. Rousina ,
J.B. Webb  and
J.P. Noad
R. Rousina
Affiliation:
Laboratory for Microstructural Sciences, National Research Council Canada 100 Sussex Drive, Ottawa, Canada K1A 0R6
J.B. Webb
Affiliation:
Laboratory for Microstructural Sciences, National Research Council Canada 100 Sussex Drive, Ottawa, Canada K1A 0R6
J.P. Noad
Affiliation:
Advanced Devices and Reliability Directorate, Communications Research Centre, Box 11490, Ottawa, Canada K2H 8S2
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Abstract

This work reports for the first time, the epitaxial deposition of ln1-xGaxSb on (100)GaAs by Metalorganic Magnetron Sputtering. High quality films could be deposited on GaAs over the entire compositional range despite the large lattice mismatch between the film and substrate (14.6% for InSb and 7.8% for GaSb). The composition of the layers was found to be directly related to the trimethylgallium and trimethylindium fluxes at constant growth temperature. Growth rates of 1 µm/hr for the GaSb and 3 µm/hr for the InSb were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 427
Copyright
Copyright © Materials Research Society 1990

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