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Metalorganic Chemical Vapour Deposition of CuInSe2 From Copper and Indium Diselenocarbamates for Solar Cell Devices

Published online by Cambridge University Press:  10 February 2011

John McAleese ,
Paul O'Brien  and
David J. Otway
John McAleese
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK
Paul O'Brien
Affiliation:
p.obrien@ic.ac.uk; d.j.otway@ic.ac.uk, jmca@ic.ac.uk
David J. Otway
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK
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Abstract

Thin film(s) of chalcopyrite CulnSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 – 450 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 157
Copyright
Copyright © Materials Research Society 1998

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