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Metallurgical Reactions in Au/Ge/Au Contact to Gallium Arsenide

  • Taeil Kim (a1), DDL Chung (a1) and S Mahajan (a1)

Abstract

Transmission electron microscopy (TEM), was used to study the interfacial structure resulting from the alloying reaction of a Au/Ge/Au film on (100) GaAs. The metallurgical reaction at 400°C results in the previously unknown hexagonal Au3Ga phase. The crystal structure of the AuoGa phase is proposed based on the observed diffraction patterns and the lattice image The well-known fcchcp coherent jnterface is observed between Au and Au3Ga such that (111)Au // (0001)Au3Ga and [110]. // [1120]Au2Ga. In addition to Au3Ga, other Au-Ga compounds (Au7Ga2, Au2Ge), a Au-Ge metastabil phase, and a Au-Ge-As ternary phase were observed after annealing. After annealing above 400°C, epitaxially regrown GaAs crystallites on the underlying GaAs substrate were revealed by cross-section TEM. The current flows through these Ge-doped regrown GaAs regions and the contact becomes ohmic The size and density of the regrown GaAs crystallite increase with increasing annealing temperature between 400 and 500°C; this explains the decreasing tendency of contact resistance with increasing annealing temperature.

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References

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1. Freeouf, J.L. and Woodall, J.M., Appl. Phys. Lett, 39, 727 (1981).
2. Grovenor, C.R.M. “Metallised Reactions and Ohmic Contact to Semiconductors”, Ph.D Dissertation, Oxford University, England (1978)
3. Lakhani, A.A. and Urech, DR, Thin Films and Interfaces II, Mat. Res. Soc. Symp. Proc, 551 (1984).
4. Grovenor, C.R.M., Thin Solid Films, 4, 409 (1983).

Metallurgical Reactions in Au/Ge/Au Contact to Gallium Arsenide

  • Taeil Kim (a1), DDL Chung (a1) and S Mahajan (a1)

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